Transistor Silicon NPN Epitaxial Type

High-Speed, High-Voltage Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 120 to 300 (IC = 0.1 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 0.2 μs (typ)

文件：218.37 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Specification of High Power IR Emitting Diode Chip

文件：87.85 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”.  GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and a

文件：88.89 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H

文件：89.42 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技