Transistor Silicon NPN Epitaxial Type

High-Speed, High-Voltage Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 120 to 300 (IC = 0.1 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 0.2 μs (typ)

文件：218.37 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：High-speed switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 1.0 A \nCollector Current ICP 2.0 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 2.25 W \nCollector-Base Voltage VCBO 180 V \nCollector-emitter voltage VCEO 120 V ;

Toshiba

东芝

Specification of High Power IR Emitting Diode Chip

文件：87.85 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”.  GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and a

文件：88.89 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H

文件：89.42 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司