Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”.  GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and a

文件：88.89 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H

文件：89.42 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of High Power IR Emitting Diode Chip

文件：87.85 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”.  GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and a

文件：88.89 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H

文件：89.42 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”.  GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and a

文件：88.89 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H

文件：89.42 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of High Power IR Emitting Diode Chip

Vishay

威世科技

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：PHOTO SENSOR

Vishay Semiconductor Opto Division