Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”.  GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and a

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VishayVishay Siliconix

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SOT-23-5

ST

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N/A

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SOP

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SOP-8

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