TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type

○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) (PNP Transistor) • Low collector-em

文件：248.8 Kbytes 页数：8 Pages

TOSHIBA

东芝

丝印：8F01；Package：PS-19；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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Power transistor for high-speed switching applications

Polarity：PNP + SMOS\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current (Q1) IC -3 A \nCollector Current (Q1) ICP -5 A \nCollector power dissipation (Q1) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1 W \nCollector-emitter voltage (Q1) VCEO -20 V \nDrain-Source voltage (Q2) VDSS 20 V ;

Toshiba

东芝

Package：8-SMD，扁平引线；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 特殊用途 描述：X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage