TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs ● Small footprint due to small and thin package ● Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 12 S (typ.) ● Low leakage current: IDSS = −10 µA (max) (VDS = −3

文件：323.41 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

Toshiba

东芝

KNOCK SENSOR INTERFACE

文件：324.74 Kbytes 页数：20 Pages

TI

德州仪器

KNOCK SENSOR INTERFACE

文件：242.27 Kbytes 页数：18 Pages

TI

德州仪器

TPIC8101 Knock Sensor Interface

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • Dual-Channel Knock Sensor Interfa

文件：718.64 Kbytes 页数：26 Pages

TI

德州仪器