TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs ● Small footprint due to small and thin package ● Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 12 S (typ.) ● Low leakage current: IDSS = −10 µA (max) (VDS = −3

文件：323.41 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

Toshiba

东芝

150 MHz SILICON QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATIONS

DESCRIPTION The UPC8101GR is a Silicon Monolithic Integrated Circuit (MMIC) which is manufactured using NECs 20 GHz fT NESAT III process. The Quadrature Modulator was designed for digital mobile communications in general, and the CT2 band requirements in particular. Operating on DC bias voltages

文件：109.48 Kbytes 页数：3 Pages

NEC

瑞萨

1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The µPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

文件：248.64 Kbytes 页数：28 Pages

NEC

瑞萨

400 MHz QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The µPC8105GR is a sillicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This modulator housed in a 16 pin plastic SSOP that is easy to install and contributes to miniaturizing the system. The device has power save function

文件：129.83 Kbytes 页数：16 Pages

NEC

瑞萨