TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enha

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TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )

Toshiba

东芝

LAN DISCRETE TRANSFORMER MODULES

LAN FILTERED CONNECTORS LAN GIGABIT IC CROSS REFERENCE LAN 10/100BASE-TX IC CROSS REFERENCE LAN 10BASE-T IC CROSS REFERENCE

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pulse

Single Port 10/100/1000BASE-Tand 1000BASE-X PHY

Introduction This purpose of this application note in conjunction with the VSC8201 Datasheet is to provide information to assist in the design and layout of the VSC8201 Gigabit Ethernet Transceiver. Power Supply Organization and Decoupling The VSC8201 requires a 3.3v and a 1.5v power su

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VITESSE

Single Port 10/100/1000BASE-Tand 1000BASE-X PHY

Introduction This purpose of this application note in conjunction with the VSC8201 Datasheet is to provide information to assist in the design and layout of the VSC8201 Gigabit Ethernet Transceiver. Power Supply Organization and Decoupling The VSC8201 requires a 3.3v and a 1.5v power su

文件：487.57 Kbytes 页数：21 Pages

VITESSE