TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • Lead(Pb)-Free • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) • High forward transfer admitt

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TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

文件：304.94 Kbytes 页数：11 Pages

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Power MOSFET (N-ch + P-ch complementary

Application Scope：Mobile equipments\nPolarity：N-ch + P-ch\nGeneration：U-MOSⅢ/U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current (Q1) ID 4.2 A \nDrain-Source voltage (Q1) VDSS 30 V \nDrain current (Q2) ID -3.4 A \nDrain-Source voltage (Q2) VDSS -30 V \nPower Dissipation PD 1.48 W ;

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TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

文件：304.94 Kbytes 页数：11 Pages

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