Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)

文件：187.23 Kbytes 页数：7 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Dual N-Channel 20 V (D-S) MOSFET

文件：1.88033 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

文件：232.71 Kbytes 页数：7 Pages

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Power MOSFET (N-ch dual)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch×2\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current (Q1) ID 3 A \nDrain current (Q2) ID 3 A \nPower Dissipation PD 1.35 W \nDrain-Source voltage (Q1) VDSS 20 V \nDrain-Source voltage (Q2) VDSS 20 V ;

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

文件：232.71 Kbytes 页数：7 Pages

TOSHIBA

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