TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOS4)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

文件：228.23 Kbytes 页数：7 Pages

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Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID -6 A \nPower Dissipation PD 2.5 W \nDrain-Source voltage VDSS -30 V ;

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

文件：228.23 Kbytes 页数：7 Pages

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