Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode

文件：81.42 Kbytes 页数：4 Pages

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Notebook PC Applications Portable Equipment Applications

文件：312.07 Kbytes 页数：9 Pages

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Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch + SBD\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current ID -2.7 A \nPower Dissipation PD 1.35 W \nDrain-Source voltage VDSS -20 V ;

Toshiba

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TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode

文件：324.21 Kbytes 页数：9 Pages

TOSHIBA

东芝

Notebook PC Applications Portable Equipment Applications

文件：312.07 Kbytes 页数：9 Pages

TOSHIBA

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