TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

High Efficiency DC／ DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 7.5 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.) • High forward

文件：248.62 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 60V VDSS 150V)

Polarity：N-ch\nGeneration：U-MOSⅢ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 2.2 A \nPower Dissipation PD 1.68 W \nDrain-Source voltage VDSS 100 V ;

Toshiba

东芝

Multiple-Input Li-ion Battery Charger

文件：381.05 Kbytes 页数：15 Pages

UPI

力智电子

Multiple-Input Li-ion Battery Charger

文件：381.05 Kbytes 页数：15 Pages

UPI

力智电子

4FXS and 4FXO H323/SIP Gateway

文件：137.91 Kbytes 页数：2 Pages

LVL1