Field Effect Transistor Silicon N Channel MOS Type (U-MOS??

Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: Qg = 26nC (typ.) • Low drain-source ON-resistance: RDS(ON) = 7mΩ(typ.) • High forward transfer admittance: |Yfs| = 21S (typ.) • Low leakage

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TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current ID 8.3 A \nPower Dissipation PD 1.68 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

东芝

High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications

文件：211.74 Kbytes 页数：7 Pages

TOSHIBA

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Silicon N Channel MOS Type (Pi-MOSV)

文件：233.39 Kbytes 页数：7 Pages

TOSHIBA

东芝

Low Capactionce 4-Line Uni-directional TVS Diode

Features Ultra low capacitance: 0.1pF typical (I/O to 1/0) Ultra low leakage: nA level Low operating voltage: 3.3V Low clamping voltage Up to 4 data lines and one power line protects Complies with following standards: —IEC 61000-4-2 (ESD) immunity test Air discharge: +20kV Contact dischar

文件：620.69 Kbytes 页数：4 Pages

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