TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.5 to −1.2 V

文件：273.13 Kbytes 页数：7 Pages

TOSHIBA

东芝

Power MOSFET (P-ch dual)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch×2\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current (Q1) ID -3 A \nDrain current (Q2) ID -3 A \nPower Dissipation PD 1.35 W \nDrain-Source voltage (Q1) VDSS -20 V \nDrain-Source voltage (Q2) VDSS -20 V ;

Toshiba

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = −10 μA (max

文件：233.59 Kbytes 页数：7 Pages

TOSHIBA

东芝

Silicon P Channel MOS Type (U-MOS??

文件：272.86 Kbytes 页数：7 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：206.33 Kbytes 页数：7 Pages

TOSHIBA

东芝