TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement-model: Vth = −0.45 to −1.2 V

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

文件：230.53 Kbytes 页数：7 Pages

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

文件：230.53 Kbytes 页数：7 Pages

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