TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.9 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement model: Vth = −0.8 to −2.0 V, (VDS = −10 V, ID = −1

文件：260.7 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power MOSFET (P-ch dual)

Polarity：P-ch×2\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current (Q1) ID -3.2 A \nDrain current (Q2) ID -3.2 A \nPower Dissipation PD 1.35 W \nDrain-Source voltage (Q1) VDSS -30 V \nDrain-Source voltage (Q2) VDSS -30 V ;

Toshiba

东芝

2-PHASE DD MOTOR DRIVER

2-PHASE DD MOTOR DRIVER

文件：180.64 Kbytes 页数：9 Pages

SAMSUNG

三星

SUPER BRIGHT T-1 3/4 (5 mm) LED LAMP - Water Clear

文件：96.85 Kbytes 页数：3 Pages

QT

MOTOR DRIVER FOR CAMERA

文件：133.18 Kbytes 页数：4 Pages

TOSHIBA

东芝