TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII)

High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 6.5 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 31

文件：212.63 Kbytes 页数：4 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications

文件：253.51 Kbytes 页数：7 Pages

TOSHIBA

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High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications

文件：253.51 Kbytes 页数：7 Pages

TOSHIBA

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Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅢ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -4.8 A \nPower Dissipation PD 1.68 W \nDrain-Source voltage VDSS -40 V ;

Toshiba

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