TPCF8004

Power MOSFET (N-ch single VDSS 30V); Drain current ID 7 A \nPower Dissipation PD 2.5 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V \n;

Application Scope：Lithium-Ion secondary batteries / Mobile equipments / Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚\n

TPCF8004

Lithium-Ion Secondary Batteries

TPCP8004

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCP8004

FieldEffectTransistorSiliconNChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:Qg=26nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=7mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=21S(typ.) •Lowleakage

TPCS8004

High-SpeedSwitchingApplicationsSwitchingRegulatorApplicationsDC-DCConverterApplications

TPCS8004

SiliconNChannelMOSType(Pi-MOSV)

TPESD8004MUTAG

LowCapactionce4-LineUni-directionalTVSDiode

Features Ultralowcapacitance:0.1pFtypical(I/Oto1/0) Ultralowleakage:nAlevel Lowoperatingvoltage:3.3V Lowclampingvoltage Upto4datalinesandonepowerlineprotects Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischar

TPWR8004PL

MOSFETsSiliconN-channelMOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=23nC(typ.) (3)Smalloutputcharge:Qoss=85.4nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.65mΩ(typ.)(VGS=10

XL8004

80V1ASwitchingCurrentBuckPFMLEDConstantCurrentDriver

XL8004

80V1ASwitchingCurrentBuckPFMLEDConstantCurrentDriver