TPCF8102

Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\n; Drain current ID -6 A \nPower Dissipation PD 2.5 W \nDrain-Source voltage VDSS -20 V \n;

TPCF8102

丝印：F3B；Package：2-3U1A；Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=24mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=14S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−20V) •Enhancementmode:Vth=−0.5to−1.2V

TPCF8102

丝印：F3B；Package：2-3U1A；TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

TPCF8102_07

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

TPCF8402

TOSHIBA
SOT23-8