丝印：F3B；Package：2-3U1A；Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.5 to −1.2 V

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丝印：F3B；Package：2-3U1A；TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

文件：212.29 Kbytes 页数：7 Pages

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Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current ID -6 A \nPower Dissipation PD 2.5 W \nDrain-Source voltage VDSS -20 V ;

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

文件：212.29 Kbytes 页数：7 Pages

TOSHIBA

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