TPCF8102

Marking：F3B；Package：2-3U1A；Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=24mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=14S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−20V) •Enhancementmode:Vth=−0.5to−1.2V

TPCF8102

Marking：F3B；Package：2-3U1A；TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

F3BF

Marking：F3BF；Package：SMAF；Surface Mount Fast Recovery Rectifier F3AF Through F3MF

Features Lowproillepackage [dealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability Fastreverserecoverytime MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C