丝印：TK105V60Z1；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.93 mA)

文件：590.07 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：TK105V60Z1；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.93 mA)

文件：590.07 Kbytes 页数：9 Pages

TOSHIBA

东芝