Silicon NPN Darlington Power Transistor

Features • Halogen free available upon request by adding suffix -HF • The complementary PNP types are the TIP115/116/117 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Mois

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MCC

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 60V 2A TO220AB

Micro Commercial Co

WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS

Description The single TSH110 and TSH111, the dual TSH112, the triple TSH113 and the quad TSH114 are current feedback operational amplifiers featuring a very high slew rate of 450V/µs and a large bandwidth of 100MHz, with only a 3.2mA quiescent supply current. The TSH111 and TSH113 feature a Stan

文件：424.63 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat pa

文件：50.9 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

FEATURES * LOW RDS(ON) - 3Ω

文件：20.08 Kbytes 页数：1 Pages

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