isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil

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ISC

无锡固电

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully molded isolated package. It is intented

文件：279.56 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

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STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

文件：646.57 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：279.56 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：279.56 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Trans Darlington PNP 100V 5A 3-Pin(3+Tab) TO-220FP Tube

NJS

Package：TO-220-3 整包；包装：剪切带（CT） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 100V 5A TO220FP

STMICROELECTRONICS

意法半导体