Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：114.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：114.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 15A TO247-3

ONSEMI

安森美半导体

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

文件：89.12 Kbytes 页数：2 Pages

CDIL

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=20-70@IC = 4A • Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC = 4A • Complement to Type TIP2955T APPLICATIONS • Designed for general-purpose switching and amplifier applications.

文件：148.75 Kbytes 页数：2 Pages

ISC

无锡固电

RF AMPLIFIER

文件：44.25 Kbytes 页数：1 Pages

SPECTRUM