TIP3055G

Complementary Silicon Power Transistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

TIP3055G

Complementary Silicon Power Transistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

TIP3055G

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 15A TO247-3

TIP3055HVF

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TIP3055T

iscSiliconNPNPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@IC=4A •Collector-EmitterSaturationVoltage-:VCE(sat)=0.8V(Max)@IC=4A •ComplementtoTypeTIP2955T APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.

TM3055

RFAMPLIFIER

TM3055

RFAMPLIFIERMODEL

TN3055

RFAMPLIFIERMODEL

UF3055

N-CHANNELENHANCEMENTMODEPOWERMOSFET

UGN3055U

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs TheUGN3055UHall-effectsensorisadigitalmagneticsensingICcapableofcommunicatingoveratwo-wirepower/signalbus.Usingasequentialaddressingscheme,thedevicerespondstoasignalonthebusandreturnsthediagnosticstatusoftheIC,as