COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

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Central

POWER TRANSISTORS(10A,40-100V,80W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 80WATTS TIP33,TIP33A,TIP33B,TIP33C ---> NPN TIP34,TIP34A,TIP34B,TIP34C ---> PNP

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MOSPEC

统懋

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

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Motorola

摩托罗拉

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP33-A-B-C Compliance to RoHS.

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COMSET

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

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ISC

无锡固电

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USEWITH TIP33, TIP33A, TIP33B, TIP33C • 80 W at 25°C Case Temperature • 10A Rated Collector Current • Min fT of 3 MHz at 10V, 500mA

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP33 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

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POINN

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

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SAVANTIC

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

文件：102.85 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to TIP33C. • Recommended for 45Wᴕ 50W Audio Frequency Amplifier Output Stage.

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KEC

KEC(Korea Electronics)