Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

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安森美半导体

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：123.98 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. • Collector−Emitter Saturation Voltage −\n   VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc\n• Collector−Emitter Sustaining Voltage −\n   VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32\n                      = 60 Vdc (Min) − TIP31A, TIP32A\n                      = 80 Vdc (Min) − TIP31B, TIP32B\n                  ;

ONSEMI

安森美半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 3A TO220

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安森美半导体