Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：123.98 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：85.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Package：TO-220-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 3A TO220

ONSEMI

安森美半导体

T0220-3

ST

上传：深圳市美思瑞电子科技有限公司

TO-220

ST/意法

上传：深圳和润天下电子科技有限公司