| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：SVF4N90；Package：TO-251J-3L；4A, 900V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance 文件：294.65 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVF4N90T；Package：TO-220-3L；4A, 900V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance 文件：294.66 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVF5N60D；Package：TO-252-2L；5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize 文件：489.01 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVF5N60D；Package：TO-252-2L；5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize 文件：489.01 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVF5N60F；Package：TO-220F-3L；5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize 文件：489.01 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVF5N60MJ；Package：TO-251J-3L；5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize 文件：489.01 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVF5N60T；Package：TO-220-3L；5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize 文件：489.01 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVF6N70D；Package：TO-252-2L；6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide 文件：374.89 Kbytes 页数：11 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVF6N70K；Package：TO-262-3L；6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide 文件：374.89 Kbytes 页数：11 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVF6N70MJG；Package：TO-251J-3L；6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide 文件：374.89 Kbytes 页数：11 Pages | SILAN 士兰微 | SILAN |
技术参数
- Polarity：
N
- Vdss (V)：
600
- Id (A)Tc=25℃：
10
- Vgs (th) (V)：
2.0~4.0
- Rds(on) @10V typ (mΩ)：
0.58
- Rds (on) @10Vmax (mΩ)：
0.75
- Qg@10Vtyp (nC)：
35.18
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Freescale |
LQFP176 |
1759 |
正品原装--自家现货-实单可谈 |
询价 | |||
VPT |
25+ |
N/A |
3600 |
原厂正规渠道、进口原装正品假一罚十 |
询价 | ||
SILAN(士兰微) |
2447 |
TO-251J-3L |
115000 |
75个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
SL士兰微 |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
SILAN |
23+ |
TO220 |
20000 |
正规渠道,只有原装! |
询价 | ||
SILAN/士兰微 |
2024 |
TO-220F |
38800 |
15余年信誉价格市场最低 力挺实单提供一站式BOM配单服务! |
询价 | ||
正纳电子热销 |
23+ |
NA |
26094 |
原装正品 可支持验货，欢迎咨询 |
询价 | ||
士兰微 |
23+ |
TO-220F |
17500 |
原装正品,假一罚十 |
询价 | ||
SILAN |
2012+ |
TO-220F |
2000 |
百分百原装正品现货/含16%增值税 |
询价 | ||
TO-252 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 |
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