SVF5N60T芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SVF5N60T	文件：489.01 Kbytes Page：10 Pages	丝印：SVF5N60T；Package：TO-220-3L；5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize 文件：489.01 Kbytes 页数：10 Pages	SILAN 士兰微	SILAN
SVF5N60T	文件：489.01 Kbytes Page：10 Pages	丝印：SVF5N60T；Package：TO-220-3L；5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize 文件：489.01 Kbytes 页数：10 Pages	SILAN 士兰微	SILAN
SVF5N60T	文件：1.09026 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET 文件：1.09026 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI

更多SVF5N60T供应商更新时间2025-9-11 16:41:00