SVF6N70DTR芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SVF6N70DTR	文件：374.89 Kbytes Page：11 Pages	丝印：SVF6N70D；Package：TO-252-2L；6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide 文件：374.89 Kbytes 页数：11 Pages	SILAN 士兰微	SILAN
SVF6N70DTR	文件：374.89 Kbytes Page：11 Pages	丝印：SVF6N70D；Package：TO-252-2L；6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide 文件：374.89 Kbytes 页数：11 Pages	SILAN 士兰微	SILAN
SVF6N70DG	文件：1.51094 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.51094 Mbytes 页数：5 Pages	DOINGTER 杜因特	DOINGTER

更多SVF6N70D供应商更新时间2025-9-21 15:10:00