SVF6N70DG资料datasheet下载批发供应士兰微-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SVF6N70DG	文件：1.51094 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.51094 Mbytes 页数：5 Pages	DOINGTER 杜因特	DOINGTER
SVF6N70DG	文件：300 bytes Page：1 Pages	F-CellTM系列高压MOSFET	Silan 士兰微	Silan
SVF6N70DTR	文件：374.89 Kbytes Page：11 Pages	6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide 文件：374.89 Kbytes 页数：11 Pages	SILAN 士兰微	SILAN
SVF6N70F	文件：1.51671 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.51671 Mbytes 页数：5 Pages	DOINGTER 杜因特	DOINGTER
SVF6N70K	文件：374.89 Kbytes Page：11 Pages	6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide 文件：374.89 Kbytes 页数：11 Pages	SILAN 士兰微	SILAN

更多SVF6N70DG供应商更新时间2025-12-13 14:02:00