F-CellTM系列高压MOSFET

SVF6N70F  N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。 • 6A，700V，RDS(on)(典型值)=1.35Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt 能力;

Silan

士兰微

N-Channel MOSFET uses advanced trench technology

文件：1.51671 Mbytes 页数：5 Pages

DOINGTER

杜因特

6A, 700V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide

文件：374.89 Kbytes 页数：11 Pages

SILAN

士兰微

6A, 700V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide

文件：374.89 Kbytes 页数：11 Pages

SILAN

士兰微

6A, 700V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide

文件：374.89 Kbytes 页数：11 Pages

SILAN

士兰微