SVF6N70MJG中文资料士兰微数据手册PDF规格书

厂商型号	SVF6N70MJG
功能描述	6A, 700V N-CHANNEL MOSFET
丝印标识	SVF6N70MJG
封装外壳	TO-251J-3L
文件大小	374.89 Kbytes
页面数量	11 页
生产厂商	Silan Microelectronics Joint-stock
企业简称	SILAN【士兰微】
中文名称	杭州士兰微电子股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-7-31 23:00:00
人工找货	SVF6N70MJG价格和库存，欢迎联系客服免费人工找货

GENERAL DESCRIPTION

SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary F-CellTM

structure VDMOS technology. The improved process and cell structure

have been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy pulse in the

avalanche and commutation mode.

These devices are widely used in AC-DC power supplies, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

 6A,700V,RDS(on(typ.)=1.35@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability