型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:382.46 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:382.46 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:382.47 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:382.47 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:373.55 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:373.56 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:373.55 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:382.46 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:382.46 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN | |
SVF7N65RF | 丝印:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, 文件:382.46 Kbytes 页数:10 Pages | SILAN 士兰微 | SILAN |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SILAN士兰微 |
25+ |
TO220 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
询价 | ||
SILAN/士兰微 |
24+ |
TO220F-3L |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
SILAN/士兰微 |
25+ |
TO-252-2L |
188600 |
全新原厂原装正品现货 欢迎咨询 |
询价 | ||
SILAN/士兰微 |
24+ |
TO-220 |
80000 |
专营SILAN士兰微原装保障 |
询价 | ||
士兰微 |
24+ |
10000 |
原装现货 |
询价 | |||
SILAN/士兰微 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
SILAN/士兰微 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
询价 | ||
SILAN/士兰微 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SILAN/士兰微 |
24+ |
NA/ |
4186 |
原厂直销,现货供应,账期支持! |
询价 | ||
SILAN/士兰微 |
24+ |
TO-220 |
60000 |
全新原装现货 |
询价 |
相关芯片丝印
更多- SVF7N65RT
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相关库存
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