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SVF7N65RF

Marking:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVF7N65RF

Marking:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVF7N65RF

Marking:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVF7N65RF

Marking:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVF7N65RF

Marking:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVF7N65RF

Marking:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVF7N65RF

Marking:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVF7N65RF

Marking:SVF7N65RF;Package:TO-220F-3L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

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