丝印：SVF5N60D；Package：TO-252-2L；5A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize

文件：489.01 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVF5N60D；Package：TO-252-2L；5A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize

文件：489.01 Kbytes 页数：10 Pages

SILAN

士兰微

Power MOSFET

文件：1.07807 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

平面高压MOS功率管

SVF5N60F/D/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。 • 5A，600V，RDS(on)(典型值)= 1.8Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt 能力;

Silan

士兰微