SVF5N60D中文资料士兰微数据手册PDF规格书

GENERAL DESCRIPTION

SVF5N60T/F/D/MJ is an N-channel enhancement mode power

MOS field effect transistor which is produced using Silan

proprietary F-CellTM structure VDMOS technology. The

improved planar stripe cell and the improved guard ring

terminal have been especially tailored to minimize on-state

resistance, provide superior switching performance, and

withstand high energy pulse in the avalanche and commutation

mode.

These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

FEATURES

∗ 5A,600V,RDS(on)（typ）=1.88Ω@VGS=10V

∗ Low gate charge

∗ Low Crss

∗ Fast switching

∗ Improved dv/dt capability