型号：SVF5N60D；Package：TO-252-2L；5A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize

文件：489.01 Kbytes 页数：10 Pages

士兰微

型号：SVF5N60DTR；Package：TO-252-2L；5A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize

文件：489.01 Kbytes 页数：10 Pages

士兰微

型号：SVF5N60D；Package：TO-252-2L；5A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize

文件：489.01 Kbytes 页数：10 Pages

士兰微

型号：SVF5N60DTR；Package：TO-252-2L；5A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize

文件：489.01 Kbytes 页数：10 Pages

士兰微

型号：SVF5N60D；Power MOSFET

文件：1.07807 Mbytes 页数：9 Pages

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