SVF5N60MJ中文资料士兰微数据手册PDF规格书

厂商型号	SVF5N60MJ
功能描述	5A, 600V N-CHANNEL MOSFET
丝印标识	SVF5N60MJ
封装外壳	TO-251J-3L
文件大小	489.01 Kbytes
页面数量	10 页
生产厂商	Silan Microelectronics Joint-stock
企业简称	SILAN【士兰微】
中文名称	杭州士兰微电子股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-23 20:00:00
人工找货	SVF5N60MJ价格和库存，欢迎联系客服免费人工找货

GENERAL DESCRIPTION

SVF5N60T/F/D/MJ is an N-channel enhancement mode power

MOS field effect transistor which is produced using Silan

proprietary F-CellTM structure VDMOS technology. The

improved planar stripe cell and the improved guard ring

terminal have been especially tailored to minimize on-state

resistance, provide superior switching performance, and

withstand high energy pulse in the avalanche and commutation

mode.

These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

FEATURES

∗ 5A,600V,RDS(on)（typ）=1.88Ω@VGS=10V

∗ Low gate charge

∗ Low Crss

∗ Fast switching

∗ Improved dv/dt capability