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SVF

5mm Height ??Lead free leads

文件:244.03 Kbytes 页数:2 Pages

ILLINOISCAPACITOR

SVF

Plug-in Signal Conditioners M-UNIT

文件:105.86 Kbytes 页数:3 Pages

MSYSTEM

爱模

SVF4N60CAF

丝印:SVF4N60CAF;Package:TO-220F-3L;4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件:411.7 Kbytes 页数:12 Pages

SILAN

士兰微

SVF4N60CAK

丝印:SVF4N60CAK;Package:TO-262-3L;4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件:411.7 Kbytes 页数:12 Pages

SILAN

士兰微

SVF4N60CAT

丝印:SVF4N60CAT;Package:TO-220-3L;4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件:411.7 Kbytes 页数:12 Pages

SILAN

士兰微

SVF4N90DTR

丝印:SVF4N90D;Package:TO-252-2L;4A, 900V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

文件:294.65 Kbytes 页数:10 Pages

SILAN

士兰微

SVF4N90DTR

丝印:SVF4N90D;Package:TO-252-2L;4A, 900V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

文件:294.66 Kbytes 页数:10 Pages

SILAN

士兰微

SVF4N90F

丝印:SVF4N90F;Package:TO-220F-3L;4A, 900V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

文件:294.65 Kbytes 页数:10 Pages

SILAN

士兰微

SVF4N90F

丝印:SVF4N90F;Package:TO-220F-3L;4A, 900V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

文件:294.66 Kbytes 页数:10 Pages

SILAN

士兰微

SVF4N90MJ

丝印:SVF4N90;Package:TO-251J-3L;4A, 900V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

文件:294.66 Kbytes 页数:10 Pages

SILAN

士兰微

技术参数

  • Polarity:

    N

  • Vdss (V):

    600

  • Id (A)Tc=25℃:

    10

  • Vgs (th) (V):

    2.0~4.0

  • Rds(on) @10V typ (mΩ):

    0.58

  • Rds (on) @10Vmax (mΩ):

    0.75

  • Qg@10Vtyp (nC):

    35.18

供应商型号品牌批号封装库存备注价格
SILAN
25+
TO-220F
30000
公司新到进口原装现货假一赔十
询价
士兰微
23+
TO-220F
17500
原装正品,假一罚十
询价
恩XP
23+
SVF522R3K1CMK4
9865
原装正品,假一赔十
询价
SILAN
2016+
TO-220
3683
只做原装,假一罚十,公司可开17%增值税发票!
询价
SL/士兰
25+
TO-220
188600
全新原厂原装正品现货 欢迎咨询
询价
Silan
1706+
TO252
9100
只做原装进口,假一罚十
询价
SILAN
24+
TO-252
25836
新到现货,只做全新原装正品
询价
恩XP
24+
BGA364
12800
强势渠道订货 7-10天
询价
一级代理
23+
N/A
8000
只做原装现货
询价
SILAN/士兰微
25+
SOT252
103
就找我吧!--邀您体验愉快问购元件!
询价
更多SVF供应商 更新时间2026-1-25 22:09:00