SVF4N90T中文资料士兰微数据手册PDF规格书

GENERAL DESCRIPTION

SVF4N90F/MJ/T/D is an N-channel enhancement mode power

MOS field effect transistor which is produced using Silan

proprietary F-CellTM high-voltage planar VDMOS technology. The

improved process and cell structure have been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode.

These devices are widely used in AC-DC power supplies, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

 4A,900V,RDS(on)(typ.)=2.7@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability