Ultrafast recovery diode

Description The STTH802 uses STs new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in TO-220AC, TO-220FPAC, DPAK, and D2PAK this device is intended for use in low voltage, high frequency inverters, free wheeling and

文件：143.08 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 200V 8A DPAK

STMICROELECTRONICS

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 200V 8A DPAK

STMICROELECTRONICS

意法半导体

ULTRAFAST SWITCHING RECTIFIER

VOLTAGE 50 to 600 Volts CURRENT 8.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

文件：71.31 Kbytes 页数：2 Pages

PANJIT

強茂

ISOLATION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 8.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

文件：74.47 Kbytes 页数：2 Pages

PANJIT

強茂

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

文件：53.04 Kbytes 页数：6 Pages

NEC

瑞萨