Ultrafast Recovery Rectifier

FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·Power switching circuits ·General purpose

文件：317.23 Kbytes 页数：2 Pages

ISC

无锡固电

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

文件：192.06 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

文件：644.45 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications inclu

文件：192.06 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

ThinkiSemi

思祁半导体

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1.2KV 8A TO220AC

STMICROELECTRONICS

意法半导体

Package：TO-220-2 绝缘，TO-220AC；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1.2KV 8A TO220LNS

STMICROELECTRONICS

意法半导体