N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab • 100% avalanche tested\n• Extremely high dv/dt capability\n• Gate charge minimized• Very low intrinsic capacitance\n• Improved diode reverse recovery characteristics\n• Zener-protected;

ST

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丝印：1HN60K3；Package：IPAK；N-channel 600 V, 6.7 廓 typ., 1.2 A SuperMESH3??Power MOSFET in DPAK and IPAK packages

文件：1.4472 Mbytes 页数：19 Pages

STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：2.00512 Mbytes 页数：9 Pages

VBSEMI

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N-Channel 650 V (D-S) MOSFET

文件：1.08904 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel 600 V, 6.7 廓 typ., 1.2 A SuperMESH3??Power MOSFET in DPAK and IPAK packages

文件：1.4472 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体