丝印：1HN60K3；Package：DPAK；N-channel 600 V, 6.7 廓 typ., 1.2 A SuperMESH3??Power MOSFET in DPAK and IPAK packages

文件：1.4472 Mbytes 页数：19 Pages

STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.08904 Mbytes 页数：9 Pages

VBSEMI

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N沟道600 V、6.4 Ohm典型值、1.2 A SuperMESH3(TM) 功率MOSFET，DPAK封装

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

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Gate charge minimized

文件：1.18691 Mbytes 页数：14 Pages

STMICROELECTRONICS

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N-channel 600 V, 6.7 廓 typ., 1.2 A SuperMESH3??Power MOSFET in DPAK and IPAK packages

文件：1.4472 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体