丝印：10NM60N；Package：IPAK；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistanc

文件：907.61 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：IPAK；Package：TO-251；Isc N-Channel MOSFET Transistor

文件：290.58 Kbytes 页数：2 Pages

ISC

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N沟道600 V、0.53 Ohm典型值、10 A MDmesh II功率MOSFET，IPAK封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

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N-Channel 6 50V (D-S) Power MOSFET

文件：2.15015 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 6 50V (D-S) Power MOSFET

文件：2.1502 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistanc

文件：907.61 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体