高压快速切换NPN功率晶体管

This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed;

ST

意法半导体

High voltage fast-switching NPN power transistor

Description This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Features • High volta

文件：243.25 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Package：TO-251-3 短引线，IPak，TO-251AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 3A TO251

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ Hi

文件：313.14 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：260.1 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The device is manufactured us

文件：315.14 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体