isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.6A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.92Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.37 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600V - 0.85廓 - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET

文件：619.24 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NM60N；Package：TO-220；N-channel 600 V, 0.85 ?? 4.6 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

文件：698.48 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10923 Mbytes 页数：10 Pages

VBSEMI

微碧半导体