STH60N099DM9-2AG数据手册ST中文资料规格书

描述 Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

特性 Features

• AEC-Q101 qualified
• Fast-recovery body diode
• Worldwide best RDS(on) per area among silicon-based fast recovery devices
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely dv/dt ruggednes
• Excellent switching performance thanks to the extra driving source pin