N-channel 80 V, 4.2 mOhm typ., 110 A STripFET F7 Power MOSFET in an H2PAK-2 package

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Among the lowest R\nDS(on) on the market\nExcellent FoM (figure of merit)\nLow C\nrss/C\niss ratio for EMI immunity\nHigh avalanche ruggedness;

ST

意法半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：314.8 Kbytes 页数：2 Pages

ISC

无锡固电

TO-263

ST

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TO-263

TOS

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H2PAK

ST/意法

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