丝印：9N60M2；Package：I2PAKFP；N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：884.75 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.76 ??typ., 4.8 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

文件：1.04937 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10861 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.47888 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体