N沟道800 V、0.3 Ohm典型值、14 A MDmesh K5功率MOSFET，TO-220FP超窄引线封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

丝印：15N80K5；Package：TO-220FPultranarrowleads；N-channel 800 V, 0.3 廓 typ., 14 A MDmesh??K5 Power MOSFET in a TO-220FP ultra narrow leads package

文件：902.63 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.375Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800 V, 0.3 ohm typ., 14 A SuperMESH 5 Power MOSFET

文件：1.28779 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.375Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：329.53 Kbytes 页数：2 Pages

ISC

无锡固电